Big size diode Encapsulation good product independent development(ZP3"1000V-6500V)

1:High airtight flat ceramic package 2:Double cooling 3:Low thermal resistance 4:Can use in special environment

                           1:High airtight flat ceramic package                           2:Double cooling                           3:Low thermal resistance                           4:Can use in special environment

                                                       domain:

                                    power supply, SVC ,SS (soft start)

dimension of chip ±0.1	Cathode diameter	VRRM	IFSM@TVJM &10ms	TVJM
mm	mm	V	KA	°c
25.4	20.5	100V-4500	5.0	150
30	25	100V-4500	5.5	150
30.48	25	100V-4500	6.3	150
35	29	100V-4500	8.3	150
38.1	31	100V-4500	10.2	150
40	33	100V-6500	12.7	150
50	43.8	100V-6500	17.9	150
55	47	100V-6500	23.7	150
63.5	55	100V-6500	29.0	150
76	67	100V-6500	32.6	150
85	76	100V-6500	55.0	150
99	88	400V-5000	68.5	150